1300 nm Semiconductor Optical Amplifier Compatible With an InP Monolithic Active/Passive Integration Technology

In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is needed to provide efficient coupling and low amount of interface reflections between amplifiers passive components. A 1300 nm semiconductor optical amplifier (SOA) on InP substrate for butt-joint investigated. Material performance were assessed from measurements broad area lasers. Room temperature operation reveals 1.2 W single facet output power with threshold current around 100 A/cm 2 per well. Characteristic temperatures T 0 = 75 K xmlns:xlink="http://www.w3.org/1999/xlink">1 294 obtained. compact model description the SOA, suitable design PICs rate equation analysis, was applied parametrize unsaturated gain measurements. Current injection efficiency 0.65, transparency carrier density 0.57 10 xmlns:xlink="http://www.w3.org/1999/xlink">18 cm xmlns:xlink="http://www.w3.org/1999/xlink">−3 , free absorption losses up 15 xmlns:xlink="http://www.w3.org/1999/xlink">−1 extracted fitting data. The verified saturation. modal dB a 600 μm long narrow ridge SOA leads saturation higher than 30 mW at 7 kA/cm . This building block contributes development technology in range, which can enable use many kind applications.